Molded Interconnect Substrates(MIS)

MIS is the latest technology touted with the potential to replace traditional Lead-frame packages and BGA substrates. The use of build-up technology and breakaway from the conventional polymer core enables MIS technology to produce ultra fine-line/space capabilities.

This is critical for high performance applications, particularly those with 5G, low noise and high frequency requirements. This cutting-edge technology provides innovative solutions to BGA, QFN, WB and fine pitch FC semiconductor packaging.

Features Advantages
Current Capability: 15/15um L/S
Minimum Via Hole: 40um
  • Ultra-fine Line Substrate
  • Full Additive Process with No Trace Under-etched
100% Solid Filled Via
  • Excellent for High Frequency Application and Thermal Dissipation
  • High Speed Via Hole Generation
  • 100% via Hole Filling CPK
Material used – Copper Plated Steel (SPCC)
  • Low Cost Raw Material
Rigid Steel Panel
Maximum: 630 x 520mm
  • Large Panel Size
  • 12 Strips at 78 x 258mm
Tail-less Design
  • No Lead Line or With Lead Lines
Core-less
  • High Reliability. Only EMC & Cu
Mold Over Mold Layering Method
  • Enabling Multi-Layer (>2 Layers)
Lower Cost than BGA Substrate with Same Fine Line Design
  • Cost Competitive
Flip-Chip, Wire-Bonding (Au, AI, Cu Wire Compatible)
  • Versatile Packaging Solutions
3D MIS
  • Capable of Built-in Capacitors & Inductors